Integrated Gate Commutated Thyristor (IGCT)

The Integrated Gate Commutated Thyristor (IGCT) combines the advantages of the hard driven GTO thyristor, including its dramatically improved turn- off performance, with technological breakthroughs at the device, gate-drive and application levels. Homogenous switching area of the IGCT up to the dynamic avalanche limits. Snubber circuits are no longer needed. Improved loss characteristics allow high frequency applications extending into the kHz range. A new IGCT device family with integrated high- power diodes has been developed for applications in the 0.5-6 MVA range, extending to several 100 MVA with series and parallel connections. A first 100 MVA inverter based on the IGCT has been in commercial operation and confirms the very high level of reliability of this new technology. Other new application using the IGCT platform includes ABB’s new ACS1000 drive for medium voltage applications.