Ovonic unified memory (OUM) is an advanced memory technology that uses a chalcogenide alloy (GeSbTe).The alloy has two states: a high resistance amorphous state and a low resistance polycrystalline state. These states are used for the representation of reset and set states respectively. The performance and attributes of the memory make it an attractive alternative to flash memory and potentially competitive with the existing non volatile memory technology. OUM, offers significantly faster write and erase speeds and higher cycling endurance than conventional Flash memory. OUM also has the advantage of a simple fabrication process that permits the design of semiconductor chips with embedded nonvolatile memory using only a few additional mask steps. In this review, the physics and operation of phase change memory will first be presented, followed by discussion of current status of development. Finally, the scaling capability of the technology will be presented. The scaling projection shows that there is no physical limit to scaling down to the 22 nm node with a number of technical challenges being identified.
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